Title :
Electrotechnology properties of amorphous hydrogenated silicon, are obtained in highionization microwave plasma of low pressure
Author :
Nefedov, D.V. ; Resnynskiy, LK ; Shanigin, V.Ya. ; Yafarov, R.K.
Author_Institution :
Saratov Dept., Inst. of Radioengineering &Electron. of RAS, Saratov
Abstract :
The research results of correlation between fundamental semiconductor and technology features of nanosized films structures based on amorphous hydrogenated silicon are obtained in microwave plasma are worded. The main part of temperature and electrical potential in formation of electrotechnological properties of silicon film structures are shown.
Keywords :
amorphous semiconductors; electric potential; elemental semiconductors; hydrogen; hydrogenation; ionisation; plasma materials processing; semiconductor thin films; silicon; Si:H; amorphous hydrogenated silicon; electrical potential; electrotechnology property; high-ionization microwave plasma; nanosized film structures; silicon film structures; Amorphous materials; Electric potential; Microwave technology; Nanostructures; Plasma properties; Plasma temperature; Semiconductor films; Silicon;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-2121-3
Electronic_ISBN :
978-1-4244-2122-0
DOI :
10.1109/APEDE.2008.4720123
