Title :
Influence of the Base/Collector-Heterojunction on the Large and Small Signal Behaviour of Si/SiGe-HBTs and Consequences for Applications in High-Speed ICs
Author :
Albers, J.N. ; Schreiber, H.-U. ; Geppert, W.
Author_Institution :
Mikroelektron. Zentrum, Ruhr-Univ. Bochum, Bochum, Germany
Abstract :
This paper describes the effects of the base/collector-heterojunction on large and small signal behaviour of a Si/SiGe/Si double heterojunction bipolar transistor (DHBT). Device simulations as well as circuit simulations help to explain the occuring effects and show their consequences.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; high-speed integrated circuits; silicon; HBT; Si-SiGe-Si; base/collector-heterojunction; double heterojunction bipolar transistor; high-speed IC; Charge carriers; Circuit simulation; Critical current density; Current density; Electrons; Energy barrier; Germanium silicon alloys; Heterojunctions; Silicon germanium; Space charge;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
