Title :
Contact technology schemes for advanced Ge and III-V CMOS technologies
Author :
Claeys, C. ; Firrincieli, A. ; Martens, K. ; Kittl, J.A. ; Simoen, E.
Author_Institution :
Imec, Leuven, Belgium
Abstract :
For sub 22 nm technologies the use of both Ge and III-V based devices is extensively investigated because of their promising electrical performances. However, for both types of devices it is of utmost importance to achieve ohmic contacts with a low specific contact resistivity in the order of 1×10-8 Ωcm2 or below. This paper reviews some basic aspects and recent insights in contact technology schemes for both Ge and III-V based technologies.
Keywords :
CMOS integrated circuits; III-V semiconductors; contact resistance; germanium; ohmic contacts; Ge; III-V CMOS technology; III-V based device; contact resistivity; contact technology scheme; electrical performance; ohmic contact; size 22 nm; Annealing; Conductivity; Doping; Germanium; Ohmic contacts; Fermi level pinning; III-V; Schottky barrier; contacts; germanium; ohmic contact; sheet resistance;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188889
