Fast and accurate design methodology for millimeter-wave integrated circuits

Author

Laemmle, B. ; Schmalz, K. ; Scheytt, C. ; Kissinger, D. ; Weigel, R.

Author_Institution

Inst. for Electron. Eng., Univ. of Erlangen-Nuremberg, Erlangen, Germany

fYear

2011

fDate

13-20 Aug. 2011

Firstpage

1

Lastpage

4

Abstract

In this paper the design of integrated passive and active circuits in silicon by use of rigorous electromagnetic analysis. A broadband directional coupler has been designed with large bandwidth at 110 GHz center frequency and measured from 20 to 140 GHz. The simulation is compared to measurement showing very good agreement. A VCO has been designed at 116 GHz center frequency. The measurement of the center frequency is within 1% of simulation. The design methodology for a 240-GHz power detector also is given showing the design of a L-type matching network.

Keywords

MIMIC; MMIC; directional couplers; electromagnetic field theory; elemental semiconductors; silicon; L-type matching network; Si; VCO; bandwidth 110 GHz; broadband directional coupler; design methodology; electromagnetic analysis; frequency 20 GHz to 140 GHz; frequency 240 GHz; integrated active circuits; integrated passive circuits; millimeter-wave integrated circuits; power detector; Design methodology; Frequency measurement; Integrated circuit modeling; Phase measurement; Transmission line measurements; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

General Assembly and Scientific Symposium, 2011 XXXth URSI

Conference_Location

Istanbul

Print_ISBN

978-1-4244-5117-3

Type

conf

DOI

10.1109/URSIGASS.2011.6050627

Filename

6050627