DocumentCode :
1913215
Title :
Influence of the Ge fraction and distribution in the base of Si/SiGe-HBTs on the transit frequency
Author :
Rossberg, Michael ; Schwierz, F. ; Schipansk, D. ; Schreiber, H.U. ; Albers, J.N.
Author_Institution :
Fachgebiet Festkorperelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
313
Lastpage :
316
Abstract :
By means of two-dimensional device simulation the influence of the Ge fraction (x) in the base of Si/Sil-xGex-HBTs on the transit frequency is investigated. The calculated results are compared to experimental data.
Keywords :
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; silicon; HBT; Si-Si1-xGex; base distribution; transit frequency; two-dimensional device simulation; Bipolar transistors; Charge carrier processes; Circuit simulation; Design optimization; Doping; Electron emission; Frequency; Germanium; Heterojunction bipolar transistors; Physics;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435512
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1913215
بازگشت