• DocumentCode
    1913215
  • Title

    Influence of the Ge fraction and distribution in the base of Si/SiGe-HBTs on the transit frequency

  • Author

    Rossberg, Michael ; Schwierz, F. ; Schipansk, D. ; Schreiber, H.U. ; Albers, J.N.

  • Author_Institution
    Fachgebiet Festkorperelektronik, Tech. Univ. Ilmenau, Ilmenau, Germany
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    313
  • Lastpage
    316
  • Abstract
    By means of two-dimensional device simulation the influence of the Ge fraction (x) in the base of Si/Sil-xGex-HBTs on the transit frequency is investigated. The calculated results are compared to experimental data.
  • Keywords
    Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; silicon; HBT; Si-Si1-xGex; base distribution; transit frequency; two-dimensional device simulation; Bipolar transistors; Charge carrier processes; Circuit simulation; Design optimization; Doping; Electron emission; Frequency; Germanium; Heterojunction bipolar transistors; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435512
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913215