مرکز منطقه ای اطلاع رساني علوم و فناوري - Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe:C HBTs

DocumentCode :

1913229

Title :

Effect of the carbon position in the base for the elimination of parasitic energy barriers in SiGe:C HBTs

Author :

Anteney, I.M. ; Ashburn, P. ; Parker, G.J. ; Lippert, G. ; Osten, H.J.

Author_Institution :

niversity of Southampton, UK

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

132

Lastpage :

135

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503506

Link To Document :