Self-consistent simulation of local potential in external-gate biased graphene nanoribbons

We report on the self-consistent analysis of armchair graphene nanoribbon (GNR) field-effect transistors (FET), in the case of multi-band coherent carrier transport. In principle, the same approach can be extended to include the contribution to charge transport due to different layers of a few-layer GNR-FET. To the aim of demonstrating the versatility of our simulation tool, we provide interesting examples about the dependence of charge and self-consistent potential on the gate voltage, for small drain voltages: these include details of numerical convergence of the iterative system of Poisson and Schrödinger equations.