Title :
A physics based compact model of gate capacitance in AlGaN/GaN HEMT devices
Author :
Khandelwal, Sourabh ; Fjeldly, Tor A.
Author_Institution :
Dept. of Electron. & Telecommun., Norwegian Univ. of Sci. & Technol., Trondheim, Norway
Abstract :
In this paper we present a physics-based analytical model for the gate capacitance Cg in AlGaN/GaN HEMT devices. A continuous and analytical expression for the 2-DEG charge density ns is developed from the consistent solution of Schrodinger´s and Poisson´s equation in a quantum well with triangular potential profile. The developed ns expression is used to derive the model for Cg. The proposed model is valid in all regions of device operation and has no empirical parameters. The model is in excellent agreement with experimental data.
Keywords :
III-V semiconductors; Schrodinger equation; aluminium compounds; gallium compounds; high electron mobility transistors; physics; semiconductor quantum wells; wide band gap semiconductors; AlGaN-GaN; HEMT device; Poisson equation; Schrodinger equation; gate capacitance; physics based compact model; physics-based analytical model; quantum well; triangular potential profile; Aluminum gallium nitride; Analytical models; Capacitance; Gallium nitride; HEMTs; Logic gates; Numerical models; AlGaN/GaN HEMT devices; Analytical Modeling; Compact Modeling; MODFETs;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188891
