Title :
Physical Modelling and Simulation of Advanced Si-devices - An Industrial Approach
Author :
Slotboom, J.W. ; van Dort, M.J. ; Hurkx, G.A.M. ; Klaassen, D.B.M. ; Kloosterman, W.J. ; van Rijs, F. ; Streutker, G. ; Velghe, R.M.D.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
A review is given of our recently improved physical models for device simulators. They have been implemented in MEDICI and MINIMOS. Examples of actual MOS and Bipolar transistors as well as more exploratory transistor structures will be presented. The physical insight obtained from these device simulations is used in our compact transistor models. Their strength and large validity range will be illustrated.
Keywords :
MOSFET; bipolar transistors; elemental semiconductors; semiconductor device models; silicon; Bipolar transistors; MEDICI; MINIMOS; MOS transistors; Si; advanced Si-devices; compact transistor models; device simulators; exploratory transistor structures; physical modelling; Bipolar transistors; Electric variables measurement; Electron mobility; Impurities; Integrated circuit modeling; MOSFETs; Medical simulation; Photonic band gap; Predictive models; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
