Title :
Modelling of electrostatic properties of <110> uniaxially strained silicon n-channel mosfets
Author :
Rahman, Md Manzur
Author_Institution :
Bangladesh Univ. of Eng. & Electron., Dhaka
Abstract :
In this paper, an accurate and efficient one dimensional self-consistent numerical solution of <110> uniaxially strained n-MOS structure is presented based on finite element method. The solution is developed using FEMLAB. Significant change occurs in the Eigen energies and the electron occupancies, intrinsic carrier concentration, inversion layer penetration and gate capacitance because of <110> uniaxial tensile stress. The consequences of these changes due to strain are explained.
Keywords :
MOSFET; finite element analysis; semiconductor device models; silicon; 1D self consistent numerical solution; Eigen energies; FEMLAB; electron occupancies; electrostatic properties; finite element method; gate capacitance; intrinsic carrier concentration; inversion layer penetration; n-channel MOSFETS; uniaxial tensile stress; uniaxially strained silicon; Capacitance; Capacitive sensors; Electrons; Electrostatics; MOS devices; MOSFETs; Poisson equations; Silicon; Tensile stress; Uniaxial strain;
Conference_Titel :
Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
Conference_Location :
Saratov
Print_ISBN :
978-1-4244-2121-3
Electronic_ISBN :
978-1-4244-2122-0
DOI :
10.1109/APEDE.2008.4720131
