Title :
Structural studies of cubic GaN films grown by MOCVD
Author :
Vilchis, H. ; Sánchez-R, V.M. ; Escobosa, A.
Author_Institution :
Electr. Eng. Dept., CINVESTA-IPN, Mexico City, Mexico
Abstract :
In this work the characterization of cubic GaN epitaxial films on templates obtained by nitridation of GaAs is reported. N- or p-type materials were obtained in Undoped or Mg-doped films respectively. The use of Mg compounds results in a tendency to incorporate the hexagonal phase in the films, but this effect can be avoided adjusting the experimental parameters. The results show that the materials can be suitable to the realization of optoelectronic devices.
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; magnesium compounds; nitridation; semiconductor doping; wide band gap semiconductors; GaAs; GaN; MOCVD; Mg; cubic GaN epitaxial film; doped film; n-type material; nitridation; optoelectronic device; p-type material; structural studies; Epitaxial growth; Epitaxial layers; Gallium arsenide; Gallium nitride; Photoluminescence; Substrates; Mg doped; cubic GaN; nitridation;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188897
