DocumentCode
1913422
Title
Transient analysis of CML and CMOS inverters using Monte Carlo simulation
Author
Galdin, S. ; Brisset, C. ; Dollfus, P. ; Hesto, P.
Author_Institution
Inst. d´´Electron. Fondamentale, Univ. Paris XI, Orsay, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
343
Lastpage
346
Abstract
This paper reports on 2D Monte Carlo simulation of two logic inverters. A CML gate is simulated in commutation regime to study the evolution of the propagation delay as a function of the circuit time constants. Furthermore the behaviour of a CMOS inverter under radiation is analyzed.
Keywords
CMOS logic circuits; Monte Carlo methods; current-mode logic; delays; invertors; 2D Monte Carlo simulation; CML inverter; CMOS logic inverter; circuit time constant; propagation delay; transient analysis; CMOS logic circuits; Capacitance; Circuit simulation; Electrodes; Logic gates; Propagation delay; Pulse inverters; Semiconductor device modeling; Transient analysis; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435518
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