Title :
New trends in microelectronics: Towards an ultimate memory concept
Author :
Makarov, A. ; Sverdlov, V. ; Selberherr, S.
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
In this paper we briefly discuss different memory technologies based on new storage information principles, highlight the most promising candidates for future universal memory, make an overview of the current state-of-the-art of these technologies, and outline future trends and possible challenges.
Keywords :
integrated memory circuits; microelectronics; storage information principles; storage memory; ultimate memory concept; Logic gates; Magnetic tunneling; Magnetization; Random access memory; Resistance; Switches; Torque; RRAM; STT-MRAM; ZRAM; non-volatile memory;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188899
