DocumentCode
1913490
Title
Application of 2D-Hydrodynamic Energy Modelling to the Optimization of Planar-Doped pseudomorphic HEMTs
Author
Sherif, K. ; Salmer, G. ; El-sayed, O.L.
Author_Institution
Dept. Hyperfreq. et Semicond., Univ. des Sci. et Technol. de Lille, Villeneuve-d´´Ascq, France
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
351
Lastpage
354
Abstract
In this work, we present the results of structural optimization of δ-doped pseudomorphic HEMTs. This study was performed using a 2D hydrodynamic energy model of high performance . The results indicate a limite for gate length reduction as well as rear plan doping. Also, we were able to show that an upper limit for the gate-edge of recess separation is to be respected.
Keywords
high electron mobility transistors; hydrodynamics; semiconductor device models; 2D-hydrodynamic energy modelling; gate length reduction; planar-doped pseudomorphic HEMT; rear plan doping; recess separation; Current density; Doping profiles; Electrons; HEMTs; Hydrodynamics; MODFETs; PHEMTs; Poisson equations; Power engineering and energy; Semiconductor process modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435520
Link To Document