مرکز منطقه ای اطلاع رساني علوم و فناوري - 100 nm gate length SiGe n-channel HMOSFET

DocumentCode :

1913495

Title :

100 nm gate length SiGe n-channel HMOSFET

Author :

O´Neill, A. ; Gurry, P. ; Clifton, P. ; Routley, P. ; Kemhadjian, H. ; Fernandez, J.

Author_Institution :

University of Newcastle upon Tyne, United Kingdom

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

164

Lastpage :

167

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503514

Link To Document :