Title :
p-MOSFETs and MODFETs with a strained Si1-xGex channel layer
Author :
Reader, A.H. ; Colak, S. ; Montree, A.H. ; Kersten, W.J. ; Gravesteijn, D.J.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
Si1-xGex channel p-MOSFETs and MODFETs containing Ge fractions from x=0 to 1.0 have been fabricated in material grown at 550°C. An improved carrier mobility was recorded for a Si0.8Ge0.2 device over that for a control MOSFET fabricated in Si also grown at this low temperature. It is argued that this growth temperature is responsible for the low absolute values of mobility recorded in these devices.
Keywords :
Ge-Si alloys; MOSFET; carrier mobility; high electron mobility transistors; Ge fractions; MODFET; Si1-xGex; carrier mobility; control MOSFET; p-MOSFET; strained channel layer; temperature 550 degC; Annealing; CMOS integrated circuits; Epitaxial layers; HEMTs; MODFETs; MOSFET circuits; Strain control; Substrates; Temperature control; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
