Title :
A practical built-in current sensor for IDDQ testing
Author :
Kim, Hoki ; Walker, D.M.H. ; Colby, David
Author_Institution :
Dept. of Electr. Eng., Texas A&M Univ., College Station, TX, USA
Abstract :
This paper describes a new built-in current sensor (BICS) design, comprised of a MAGFET current sensor, stochastic sensor, self-calibration tool, counter, and scan chain. By indirectly measuring the current, the sensor avoids the unacceptable drawbacks of past BICS designs. Test chips fabricated in 180 nm and 250 nm technology demonstrate that the sensor can be used for IDDQ testing of large, high-performance, deep submicron circuits. This sensor should extend practical IDDQ testing to the 35 nm technology generation
Keywords :
VLSI; calibration; design for testability; electric current measurement; electric sensing devices; integrated circuit testing; leakage currents; 180 nm; 250 nm; 35 nm; BICS design; DFT circuitry; IDDQ testing; MAGFET current sensor; built-in current sensor; counter; deep submicron circuits; scan chain; self-calibration tool; stochastic sensor; Circuit faults; Circuit optimization; Circuit testing; Current measurement; Delay effects; Design for testability; Fault detection; Logic testing; Semiconductor device measurement; Sensor phenomena and characterization;
Conference_Titel :
Test Conference, 2001. Proceedings. International
Conference_Location :
Baltimore, MD
Print_ISBN :
0-7803-7169-0
DOI :
10.1109/TEST.2001.966657
