Title :
Reduced Hot Electron Degradation Using Delta-Doped MOSFETs
Author :
Wood, A.C.G. ; Neill, A. G O ; Phillips, P.J. ; Whall, T.E. ; Parker, E.H.C. ; Taylor, S. ; Gundlach, A.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Newcastle-upon-Tyne, Newcastle upon Tyne, UK
Abstract :
Reliability measurements have been carried out on n-channel delta- doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 105 seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices. The anodic oxide appears to be less susceptible to damage than a conventional oxide.
Keywords :
MOSFET; anodisation; oxidation; semiconductor device reliability; semiconductor doping; anodic gate oxide; anodic oxide; conventional oxide; delta-doped device; hot electron degradation; n-channel delta- doped MOSFET; oxide damage; reliability measurement; threshold voltage; Degradation; Electrons; Equations; Hot carrier injection; Impact ionization; Lead compounds; MOSFETs; Scattering; Temperature; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
