Reduced Hot Electron Degradation Using Delta-Doped MOSFETs

Author

Wood, A.C.G. ; Neill, A. G O ; Phillips, P.J. ; Whall, T.E. ; Parker, E.H.C. ; Taylor, S. ; Gundlach, A.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Newcastle-upon-Tyne, Newcastle upon Tyne, UK

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

369

Lastpage

372

Abstract

Reliability measurements have been carried out on n-channel delta- doped MOSFETs incorporating an anodic gate oxide. The threshold voltage shifts induced in these devices when stressed for up to 10⁵ seconds is compared with that observed for control devices fabricated on plain wafers. The delta-doped devices show a reduced threshold voltage shift indicating a reduction in oxide damage for these devices. The anodic oxide appears to be less susceptible to damage than a conventional oxide.

Keywords

MOSFET; anodisation; oxidation; semiconductor device reliability; semiconductor doping; anodic gate oxide; anodic oxide; conventional oxide; delta-doped device; hot electron degradation; n-channel delta- doped MOSFET; oxide damage; reliability measurement; threshold voltage; Degradation; Electrons; Equations; Hot carrier injection; Impact ionization; Lead compounds; MOSFETs; Scattering; Temperature; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435524

Link To Document

https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913592