Title :
A High Density Multi-Bit/Analog DRAM Cell
Author :
Kim, Wonchan ; Kih, Joongsik ; Kim, Gyudong ; Jung, Sanghun ; Ahn, Gijung ; Oh, Kye Hwan
Author_Institution :
Dept. of Electron. Eng., Seoul Nat. Univ., Seoul, South Korea
Abstract :
A new two-transistor memory cell concept for 16-Mbit DRAM and beyond is described. This cell offers the advantages of small cell size, non-destructive and fast operation of reading with a built-in amplifier, and the capability of storing multiple-valued or analog information.
Keywords :
DRAM chips; amplifiers; analogue circuits; analog DRAM cell; analog information; built-in amplifier; high density multibit DRAM cell; multiple-valued information; nondestructive operation; small cell size; storage capacity 16 Mbit; two-transistor memory cell; Capacitance; Capacitors; Electrodes; Joining processes; Operational amplifiers; Random access memory; Research and development; Thin film transistors; Threshold voltage; Writing;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
