Title :
44-GHz, 0.5-V compact power detector IC in 65-nm CMOS
Author :
Kangyang Xu ; Xin Yang ; Wei Wang ; Yoshimasu, Toshihiko
Author_Institution :
Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan
Abstract :
This paper presents an ultra-wideband and ultra-low-voltage compact power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOSFET differential pair with resistive feedback and a pMOSFET buffer. The power detector IC was designed, fabricated and fully evaluated using Fujitsu 65-nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 44 GHz at an operation voltage of only 0.5 V. In addition, the detector IC exhibits a minimum detectable power of -15 dBm with high linearity.
Keywords :
CMOS integrated circuits; UHF detectors; UHF integrated circuits; field effect MIMIC; field effect MMIC; integrated circuit design; low-power electronics; microwave detectors; millimetre wave detectors; power integrated circuits; CMOS technology; frequency 100 MHz to 44 GHz; microwave applications; millimeter-wave applications; nMOSFET differential pair; pMOSFET buffer; resistive feedback; size 65 nm; ultra-low-voltage compact power detector IC; ultra-wideband compact power detector IC; voltage 0.5 V; CMOS integrated circuits; Detectors; Logic gates; Power amplifiers; Transceivers; Voltage measurement; CMOS; Detector IC; Millimeter-Wave; Ultra-low-power; Ultra-wideband;
Conference_Titel :
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location :
X´ian
DOI :
10.1109/IEEE-IWS.2014.6864216
