44-GHz, 0.5-V compact power detector IC in 65-nm CMOS

Author

Kangyang Xu ; Xin Yang ; Wei Wang ; Yoshimasu, Toshihiko

Author_Institution

Grad. Sch. of Inf., Production & Syst., Waseda Univ., Kitakyushu, Japan

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

3

Abstract

This paper presents an ultra-wideband and ultra-low-voltage compact power detector IC for microwave and millimeter-wave applications. The power detector circuit includes an nMOSFET differential pair with resistive feedback and a pMOSFET buffer. The power detector IC was designed, fabricated and fully evaluated using Fujitsu 65-nm CMOS technology. The detector IC exhibits an operation frequency from 100 MHz to 44 GHz at an operation voltage of only 0.5 V. In addition, the detector IC exhibits a minimum detectable power of -15 dBm with high linearity.

Keywords

CMOS integrated circuits; UHF detectors; UHF integrated circuits; field effect MIMIC; field effect MMIC; integrated circuit design; low-power electronics; microwave detectors; millimetre wave detectors; power integrated circuits; CMOS technology; frequency 100 MHz to 44 GHz; microwave applications; millimeter-wave applications; nMOSFET differential pair; pMOSFET buffer; resistive feedback; size 65 nm; ultra-low-voltage compact power detector IC; ultra-wideband compact power detector IC; voltage 0.5 V; CMOS integrated circuits; Detectors; Logic gates; Power amplifiers; Transceivers; Voltage measurement; CMOS; Detector IC; Millimeter-Wave; Ultra-low-power; Ultra-wideband;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864216

Filename

6864216