Title :
0.25 μmCMOS with N2O nitrided gate oxides
Author :
Pomp, H.G. ; Lifka, H. ; Paulzen, G. ; Montree, A.H. ; Woerlee, P.H. ; Woltjer, R.
Author_Institution :
Philips Res. Labs., Eindhoven, Netherlands
Abstract :
For a 0.25 μm CMOS process a simple and compatible two-step N2O nitridation technology was developed. High quality dielectrics were obtained for both surface channel PMOS and NMOS devices. The use of the nitridation technology improves the gate oxide quality considerably. Furthermore the technology enables the use of BF2+ for gate and drain doping of the PMOS devices. The hot carrier degradation measured at worst case condition (Vga = l/2Vds), results in a slight improvement of lifetime of PMOS devices.
Keywords :
CMOS integrated circuits; dielectric materials; nitridation; CMOS process; gate oxide quality; gate-drain doping; high-quality dielectrics; hot carrier degradation; nitridation technology; size 0.25 mum; surface channel NMOS devices; surface channel PMOS devices; Annealing; Boron; CMOS process; CMOS technology; Dielectric devices; Furnaces; MOS devices; Oxidation; Threshold voltage; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
