• DocumentCode
    1913772
  • Title

    Thermal Oxidation of Lightly- and Heavily-Doped Silicon in Pure N2O

  • Author

    Sun, S.C. ; Chang, H.Y.

  • Author_Institution
    Nat. Nano Device Lab., Chiao Tung Univ., Hsinchu, Taiwan
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    403
  • Lastpage
    406
  • Abstract
    The growth of silicon dioxide in pure N2O has been evaluated by using conventional furnace oxidation method. The results have pointed out that neither lightly-doped nor heavily-doped substrates exhibit any self-limited growth behavior. The growth kinetics can be described by the linear-parabolic model. Enhanced oxidation has also been observed on heavily arsenic doped substrates in the pure N2O ambient.
  • Keywords
    arsenic; boron; elemental semiconductors; furnaces; heavily doped semiconductors; oxidation; silicon; silicon compounds; thin films; Si:As; Si:B; SiO2; enhanced oxidation; furnace oxidation method; growth kinetics; heavily arsenic doped substrates; heavily-doped silicon; heavily-doped substrate; lightly-doped silicon; lightly-doped substrate; linear-parabolic model; self-limited growth behavior; silicon dioxide growth; thermal oxidation; Argon; Dielectric substrates; Furnaces; Kinetic theory; Moisture; Oxidation; Rapid thermal processing; Silicon compounds; Sun; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435531
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913772