Title :
An advanced drain current model for DGMOSFETs including self-heating effects
Author :
Gonzalez, Borja ; Íñiguez, B. ; Lázaro, A. ; Iniguez, B. ; Lazaro, Antonio ; Cerdeira, A.
Author_Institution :
IUMA & DIEA, Univ. de Las Palmas de G.C., Las Palmas, Spain
Abstract :
An advanced drain current model for symmetrical Double-Gate MOSFETs (DGMOSFETs), including short channel, velocity saturation and self-heating effects, is presented. The temperature dependence of the low-field mobility, saturation velocity and inversion charge is analyzed and accurately included in the model. Self-heating is considered through the thermal resistance of the device, which is estimated in two ways: from an equivalent thermal circuit and from numerical output characteristic curves, obtained with a commercial TCAD tool (Sentaurus by Synopsys), and fitted with a drain current model. The validity of the model is checked by comparing with simulation results, for the typical bias range used in integrated circuits.
Keywords :
MOSFET; equivalent circuits; semiconductor device models; thermal resistance; DGMOSFET; Sentaurus; advanced drain current model; commercial TCAD tool; equivalent thermal circuit; inversion charge; low-field mobility; numerical output characteristic curves; saturation velocity; self-heating effects; symmetrical double-gate MOSFET; thermal resistance; velocity saturation; Conductivity; Integrated circuit modeling; Logic gates; Silicon; Thermal conductivity; Thermal resistance; DGMOSFET; compact model; self-heating effects; thermal resistance;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188909
