DocumentCode :
1913800
Title :
Comparison of RTP N2O-and NH3-Nitrided Thin SiO2 Films
Author :
Bouvet, D. ; Novkovski, N. ; Mi, J. ; Letourneau, P. ; Dutoit, M. ; Pio, F. ; Riva, C. ; Bellafiore, N.
Author_Institution :
Swiss Fed. Inst. of Technol., Lausanne, Switzerland
fYear :
1993
fDate :
13-16 Sept. 1993
Firstpage :
407
Lastpage :
410
Abstract :
Thin SiO2 films nitrided by rapid thermal processing in N2O and NH3 are compared. The effect of nitrogen on growth kinetics, composition and electrical characteristics is determined.
Keywords :
nitridation; rapid thermal processing; silicon compounds; surface hardening; thin films; RTP nitrided thin silica films; SiO2; electrical characteristics; growth kinetics; rapid thermal processing; Annealing; Kinetic theory; Mass spectroscopy; Microelectronics; Monitoring; Nitrogen; Rapid thermal processing; Research and development; Temperature; Wet etching;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
Print_ISBN :
2863321358
Type :
conf
Filename :
5435532
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1913800
بازگشت