• DocumentCode
    1913808
  • Title

    Simulation of Base Current Evolution in C-In doped GaInP/GaAs HBT Under Current Induced Stress

  • Author

    Maneux, C. ; Labat, N. ; Touboul, A. ; Danto, Y. ; Delage, S.L. ; Cassette, S.

  • Author_Institution
    Universite de Bordeaux I, Talence Cedex, France
  • fYear
    1998
  • fDate
    8-10 Sept. 1998
  • Firstpage
    220
  • Lastpage
    223
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Device Research Conference, 1998. Proceeding of the 28th European
  • Conference_Location
    Bordeaux, France
  • Print_ISBN
    2-86332-234-6
  • Type

    conf

  • Filename
    1503528
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1913808