DocumentCode
1913841
Title
Computer simulation of low-noise SHF amplifier using field effect transistor
Author
Yakovleva, LB ; Sayenko, V.D.
Author_Institution
Saratov State Tech. Univ., Saratov
fYear
2008
fDate
24-25 Sept. 2008
Firstpage
268
Lastpage
273
Abstract
In the work the results of computer simulation of low-noise amplifier using HEMT NE3210S01 at frequency 4 GHz with the help of Microwave Office are presented. The diagrams of amplification and noise, the comparison of results of modeling with experiment are submitted.
Keywords
HEMT circuits; circuit CAD; low noise amplifiers; microwave amplifiers; Microwave Office; computer simulation; field effect transistor; frequency 4 GHz; high electron mobility transistors; low-noise amplifiers; microwave amplifiers; Computer simulation; Equations; Frequency; Gallium arsenide; HEMTs; Helium; Low-noise amplifiers; Microwave FETs; Microwave amplifiers; National electric code;
fLanguage
English
Publisher
ieee
Conference_Titel
Actual Problems of Electron Devices Engineering, 2008. APEDE '08. International Conference on
Conference_Location
Saratov
Print_ISBN
978-1-4244-2121-3
Electronic_ISBN
978-1-4244-2122-0
Type
conf
DOI
10.1109/APEDE.2008.4720153
Filename
4720153
Link To Document