Title :
Reduction of Bulk Oxide Trapping in poly-Si Gated MOS Capacitors by Fluorination
Author :
Afanas, V.V. ; de Nijs, J.M.M. ; Balk, P.
Author_Institution :
DIMES, Delft Univ. of Technol., Delft, Netherlands
Abstract :
The effect of fluorination on the bulk oxide traps in poly-Si/SiO2/Si capacitors was studied using charge injection techniques. A substantial reduction of the density of both electron and hole traps was observed after fluorine implantation into the gate. The process of trap elimination was found to be dependent on the presence of hydrogen in the oxide, suggesting the involvement of some mobile species, e.g. HF.
Keywords :
MOS capacitors; electron traps; fluorine; hole traps; ion implantation; silicon; silicon compounds; Si-SiO2-Si; Si:F; bulk oxide trapping; charge injection; electron traps; fluorination effect; fluorine implantation; hole traps; poly-Si gated MOS capacitors; trap elimination; Annealing; Charge carrier processes; Degradation; Electron traps; Hafnium; Hydrogen; Kinetic theory; MOS capacitors; MOSFET circuits; Physics;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
