Pulsed Drain Current : A Highly Sensitive Technique for Interface Characterization in VLSI MOSFET´s

This paper presents a new highly sensitive technique for interface characterization in VLSI MOSFET´s. The technique appears to be very promising for future generations of devices as its sensitivity increases with decreasing device dimensions. Our results show that it can detect trap densities as low as a few 10⁹ eV^-1 cm^-2. Moreover, this sensitivity can be further enhanced by operating at liquid nitrogen temperature.