Simultaneous Measurement of Carrier Mobility and Recombination Lifetime on a Testchip in MOS-Technology by means of the Shockley-Haynes-Experiment within the Temperature Range 98 K to 398 K

With the purpose of determining material parameters of MOS-technology dedicated Shockley-Haynes-structures and MOS varactors, among others, have been integrated on a single chip. By use of a specially developed electronic unit an improved performance of the Shockley-Haynes-experiment has been achieved. In this paper from the comparison of measurements and analytic simulations the hole mobility μ_p and the inherent recombination lifetime τ_p are determined simultaneously. The extracted values of hole mobility agree to well-known model curves, whereas lifetime is rather short showing a positive temperature coefficient[1-2]. Ct-measurements on MOS varactors give a generation/recombination lifetime ratio τ_g/τ_r=25 (T=298K). Further analysis of generation lifetime τ_g indicates recombination/generation levels close to the intrinsic energy.