مرکز منطقه ای اطلاع رساني علوم و فناوري - MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics

DocumentCode :

1913910

Title :

MOSFET characteristics of ultra thin CVD Si3N4 gate dielectrics

Author :

Song, S.C. ; Luan, H.F. ; Chen, Y.Y. ; Kwong, D.L. ; Gardener, Mark ; Fulford, Jim ; Allen, Mike

Author_Institution :

The University of Texas, Austin, United States

fYear :

1998

fDate :

8-10 Sept. 1998

Firstpage :

232

Lastpage :

235

fLanguage :

English

Publisher :

ieee

Conference_Titel :

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location :

Bordeaux, France

Print_ISBN :

2-86332-234-6

Type :

conf

Filename :

1503531

Link To Document :