Channel Width Dependence of Hot-Carrier Induced Degradation in Shallow Trench Isolated pMOSFETs

Author

Ishimaru, Kazunari ; Chen, Jone F. ; Hu, Chenming

Author_Institution

Toshiba Corp., Yokohama, Japan

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

240

Lastpage

243

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

Filename

1503533

Link To Document