Title :
InP Channel HFETs with High Breakdown Voltage and Low Channel Noise
Author :
Naït-Zerrad, K. ; Post, G. ; Balestra, F.
Author_Institution :
Lab. de Bagneux, FRANCE TELECOM, Bagneux, France
Abstract :
We present here the characteristics of InP channel AlInAs barrier heterostructure FETs which show high drain breakdown voltage, very low gate leakage current and low noise at low and intermediate frequencies.
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; high electron mobility transistors; indium compounds; leakage currents; AlInAs; HFET; InP; heterostructure FET; high breakdown voltage; low channel noise; very low gate leakage current; Breakdown voltage; Buffer layers; Current measurement; Fabrication; Frequency; HEMTs; Indium phosphide; Leakage current; MODFETs; Silicon;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
