Title :
Conductivity modulation in p-i-n diodes simulated using a highly flexible approach
Author :
Kramer, K.M. ; Hitchon, W.N.G. ; Divan, D.M.
Author_Institution :
Dept. of Electr. & Comput. Eng., Wisconsin Univ., Madison, WI, USA
Abstract :
A highly flexible numerical tool for power device simulation has been developed. It allows devices to be simulated microscopically on the basis of device geometry and physics, which can be specified very easily and with few limitations. This framework (known as the symbolic generation language or SGL) also allows interfacing to external circuit components to permit time-domain simulations. Anomalous behavior in p-i-n diodes and insulated-gate bipolar transistors (IGBTs) has been experimentally observed and is being investigated with the microscopic model. The system is used to obtain a better understanding of an anomalous di/dt dependent voltage, referred to as conductivity modulation lag (CML). The presence of the CML effect has been confirmed by experiment and now by simulation for a p-i-n diode
Keywords :
digital simulation; electronic engineering computing; p-i-n diodes; semiconductor device models; time-domain analysis; anomalous di/dt dependent voltage; conductivity modulation; conductivity modulation lag; device geometry; device physics; insulated-gate bipolar transistors; p-i-n diodes; power device simulation; symbolic generation language; time-domain simulations; Circuit simulation; Conductivity; Geometry; Insulated gate bipolar transistors; Insulation; Microscopy; P-i-n diodes; Physics; Solid modeling; Time domain analysis;
Conference_Titel :
Industry Applications Society Annual Meeting, 1993., Conference Record of the 1993 IEEE
Conference_Location :
Toronto, Ont.
Print_ISBN :
0-7803-1462-X
DOI :
10.1109/IAS.1993.299049
