• DocumentCode
    1914050
  • Title

    DC Characterization of Ga0.51In0.49P/GaAs Insulated-Gate Inverted-Structure HEMT Grown by Gas Source Molecular Beam Epitaxy (GSMBE)

  • Author

    Lu, S.S. ; Huang, C.L.

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    1993
  • fDate
    13-16 Sept. 1993
  • Firstpage
    455
  • Lastpage
    458
  • Abstract
    In this paper, a Ga0.51In0.49P/GaAs insulated-gate inverted structure HEMT (I2HEMT) was fabricated and investigated. It showed negligible deep-trap effect at low temperatures due to the low DX centers in GalnP. High drain-to-source breakdown voltage (10V) was obtained by using the GalnP insulated layer.
  • Keywords
    III-V semiconductors; chemical beam epitaxial growth; electric breakdown; gallium arsenide; gallium compounds; high electron mobility transistors; indium compounds; semiconductor growth; DC characterization; GSMBE; Ga0.51In0.49P-GaAs; I2HEMT growth; deep-trap effect; drain-to-source breakdown voltage; gas source molecular beam epitaxy; insulated layer; insulated-gate inverted-structure HEMT growth; low DX center; voltage 10 V; Dielectrics and electrical insulation; Electric breakdown; Gallium arsenide; Gas insulation; HEMTs; Optical materials; PHEMTs; Photonic band gap; Temperature; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
  • Conference_Location
    Grenoble
  • Print_ISBN
    2863321358
  • Type

    conf

  • Filename
    5435543
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914050