Title :
Extraction of the apparent electron lifetime in the base of Si/Si(1-x)Ge(x) Heterojunction Bipolar Transistors
Author :
Assous, M. ; Mouis, M.
Author_Institution :
France Telecom, Meylan, France
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
