Title :
Design and modeling of an on-chip asymmetric tap balun for CMOS millimeter-wave circuits
Author :
Peng Huang ; Yang Chen ; Kaizhe Guo ; Kai Kang
Author_Institution :
Univ. of Electron. Sci. & Technol. of China, Chengdu, China
Abstract :
A systematic method to design a balun for impedance transformation in millimeter-wave (mm-wave) integrated circuit design is presented in this paper. The balun was designed by stacking two top metals and transmission lines, and fabricated by 90-nm RF CMOS processing. In addition, a lumped model of the balun including skin effect and substrate effect has been established. The model shows good agreement with the measurement results up to 65 GHz. The measured insertion loss of the balun is 1.6 dB at 60 GHz and the 1dB bandwidth is extended from 53 GHz to 65 GHz. The simulated phase and amplitude difference are 180.5° and 0.15 dB at 60 GHz, respectively.
Keywords :
CMOS integrated circuits; baluns; field effect MIMIC; integrated circuit design; skin effect; CMOS millimeter-wave circuits; RF CMOS processing; frequency 60 GHz; impedance transformation; loss 1.6 dB; lumped model; millimeter-wave integrated circuit design; on-chip asymmetric tap balun; size 90 nm; skin effect; substrate effect; top metals; transmission lines; Impedance; Impedance matching; Integrated circuit modeling; Power transmission lines; Semiconductor device modeling; Transmission line measurements; Windings; Asymmetric tap balun; impedance matching; millimeter-wave integrated circuit; modeling; transformer;
Conference_Titel :
Wireless Symposium (IWS), 2014 IEEE International
Conference_Location :
X´ian
DOI :
10.1109/IEEE-IWS.2014.6864232
