A Piezo-Electric Field Effect Transistor (PEFET) using Al0.35Ga0.65As/In0.2Ga0.8As/GaAs strained layer structure on (111)B GaAs substrate

Author

Huang, C.L. ; Lu, S.S.

Author_Institution

Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

459

Lastpage

462

Abstract

This paper describes a novel electronic device using a two dimensional electron gas produced by the strain-induced electric field in [111] growth-axis Al_0.35SGa_{0. 65}As/In_0.2Ga_0.8As/GaAs strained layer structure without the necessity of modulation doping. Two dimensional densities greater than 10¹¹ cm^-2 were observed both at room temperature and 77°K. A field effect transistor using this strain-layer structure was fabricated successfully.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; piezoelectric devices; semiconductor doping; (111)B GaAs substrate; Al_0.35Ga_0.65As-In_0.2Ga_0.8As-GaAs; PEFET; electronic device; modulation doping; piezo-electric field effect transistor; strain-induced electric field; strained layer structure; temperature 293 K to 298 K; temperature 77 K; two dimensional electron gas; Doping; Electron mobility; Epitaxial layers; FETs; Gallium arsenide; Piezoelectric effect; Piezoelectric polarization; Snow; Temperature; Zinc;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435544