Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping

Author

Schmundt, H. ; Knoll, D. ; Heinemann, B. ; Schley, P. ; Winter, M. ; Kuck, B. ; Schlote, J. ; Blum, K. ; Kurps, R. ; Grabolla, T. ; Rucker, Holger ; Tillack, B. ; Bolze, K.D.

Author_Institution

Institute for Semiconductor Physics, Frankfurt (Oder), Germany

fYear

1998

fDate

8-10 Sept. 1998

Firstpage

260

Lastpage

263

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Device Research Conference, 1998. Proceeding of the 28th European

Conference_Location

Bordeaux, France

Print_ISBN

2-86332-234-6

Type

Filename

1503538

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