Reducing Transient Enhanced Diffusion of Boron in Si/SiGe Heterojunction Bipolar Transistors by BBR3 Predeposition for External Base Doping
Author :
Schmundt, H. ; Knoll, D. ; Heinemann, B. ; Schley, P. ; Winter, M. ; Kuck, B. ; Schlote, J. ; Blum, K. ; Kurps, R. ; Grabolla, T. ; Rucker, Holger ; Tillack, B. ; Bolze, K.D.
Author_Institution :
Institute for Semiconductor Physics, Frankfurt (Oder), Germany
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
260
Lastpage :
263
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
