A Q-band CMOS LNA with noise cancellation

Author

Kai Yi ; Qingyou Zheng ; Yiming Yu ; Kai Kang

Author_Institution

Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2014

fDate

24-26 March 2014

Firstpage

1

Lastpage

4

Abstract

In this paper, a Q-band CMOS low noise amplifier (LNA) exploiting transformer positive-negative feedback and noise cancelling is presented. The proposed low noise amplifier consists of a positive transformer feedback to achieve noise-reduction and a negative transformer feedback to obtain good reverse isolation and stability. The noise cancellation technique is applied in this LNA to achieve a low noise figure. This LNA has been fabricated by standard commercial 90 nm technology. Based on measurements, this proposed LNA achieve a voltage gain of 11.5 dB, a noise figure of 6.5 dB and an input P1dB of -18 dBm. It consumes 11.5 mA from a 1.2 V supply and the total area of this design is 0.6*0.7 mm².

Keywords

CMOS analogue integrated circuits; circuit feedback; field effect MIMIC; low noise amplifiers; millimetre wave amplifiers; Q-band CMOS LNA; current 11.5 mA; gain 11.5 dB; low noise amplifier; low noise figure; noise cancellation technique; noise figure 6.5 dB; noise-reduction; reverse isolation; size 90 nm; transformer positive-negative feedback; voltage 1.2 V; CMOS integrated circuits; CMOS technology; Millimeter wave technology; Noise cancellation; Noise figure; CMOS; Q-band; feedback; low noise amplifier; millimeter wave; noise cancelling; transformer;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2014 IEEE International

Conference_Location

X´ian

Type

conf

DOI

10.1109/IEEE-IWS.2014.6864235

Filename

6864235