Title :
Comparison of Ti and Ni salicides as regards the electrical conductance of silicided films
Author :
Ohguro, T. ; Morimoto, T. ; Nishiyama, A. ; Ushiku, Y. ; Iwai, H.
Author_Institution :
ULSI Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
In order to achieve the high-speed operation of scaled CMOS devices, low source-drain and gate resistivity is required. However , an abrupt increase in TiSi2/polysilicon resistance occurs when the line width falls below 0.25μm. We analyze this degradation and indicate that NiSi is a suitable candidate to replace TiSi2, because in the case of NiSi no resistance degradation occurs.
Keywords :
CMOS analogue integrated circuits; nickel compounds; oscillators; titanium compounds; CMOS ring oscillator; NiSi; TiSi2; electrical conductance; line width; low source-drain-gate resistivity; scaled CMOS device; silicided film; CMOS process; Conductive films; Conductivity; Degradation; Electrical resistance measurement; Electrodes; Grain size; Nickel; Temperature; Titanium;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
