Title :
Selective CVD TiSi2 for Sub-0.5 μm N+/P+ CMOS Devices
Author :
Haond, M. ; Regolini, J.L.
Author_Institution :
Centre Nat. d´´Etude des Telecommun., FRANCE TELECOM, Meylan, France
Abstract :
We have used a new selective CVD TiSi2 in an advanced CMOS process. Subhalf-micron transistors have been characterised, with results equivalent to devices made with more conventional salicide. Ring oscillators with typical gate delay times have been fabricated. Finally, fully functional 16K SRAMS and 350 KT ASICs have been fabricated, which indicates the possibility of using this new process for future VLSI.
Keywords :
CMOS memory circuits; SRAM chips; VLSI; application specific integrated circuits; chemical vapour deposition; oscillators; ASIC; N-P CMOS devices; SRAM; VLSI; advanced CMOS process; gate delay times; ring oscillators; salicide; selective CVD; size 0.5 mum; subhalf-micron transistors; Boron; CMOS process; Inductors; MOS devices; MOSFETs; Random access memory; Ring oscillators; Substrates; Telecommunications; Transistors;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
