High Resolution Delineation of Bi-dimensional Dopant Profiles in Silicon: Early Stages of Diffusion from Cobalt Silicide Layers

Author

La Via, F. ; Spinella, C. ; Rimini, E.

Author_Institution

IMETEM, Catania, Italy

fYear

1993

fDate

13-16 Sept. 1993

Firstpage

489

Lastpage

492

Abstract

The early stages of diffusion into crystalline Si from 170 nm thick CoSi₂ layers doped with As and B have been studied by a high resolution delineation technique of dopant profiles. The junction shape follows the silicide-silicon interface for B while it is deeper near the grain boundary for As. The different behaviour is related to the different diffusion mechanisms of As and B in the silicide layer. The junction shape has a great effect on the reverse characteristics of the diodes obtained by As or B diffusion from the CoSi₂ layer.

Keywords

arsenic; boron; chemical interdiffusion; cobalt compounds; doping profiles; elemental semiconductors; grain boundaries; grain boundary diffusion; silicon; As diffusion; B diffusion; Si-CoSi₂:As,B; bidimensional dopant profiles; cobalt silicide layers; crystalline Si; diffusion mechanisms; diode reverse characteristics; grain boundary; high resolution delineation technique; junction shape; silicide-silicon interface; size 170 nm; Annealing; Cobalt; Diodes; Etching; Grain boundaries; Scanning electron microscopy; Shape; Silicides; Silicon; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European

Conference_Location

Grenoble

Print_ISBN

2863321358

Type

conf

Filename

5435550