Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers

Author

Akatsuka, Masanori ; Sueoka, Koji ; Katahama, Hisashi ; Sadamitsu, S. ; Koike, Yasuo

Author_Institution

Adv. Technol. Res. Labs., Sumitomo Metal Ind. Ltd., Amagasaki, Japan

fYear

1997

fDate

6-8 Oct 1997

Abstract

The effects of oxide precipitates on mechanical strength are investigated in CZ, p/p-, p/p+ and p/p++ wafers during device manufacturing. In high temperature processes, the mechanical strength of epitaxial wafers is far superior to that of CZ wafers. In contrast, the mechanical strength of all the wafers remains sufficient in low temperature processes. The slip dislocation behavior can be explained by the sizes of oxide precipitates formed in each wafer

Keywords

X-ray topography; elemental semiconductors; mechanical strength; precipitation; semiconductor epitaxial layers; semiconductor technology; silicon; slip; transmission electron microscopy; CZ wafers; Si; TEM; X-ray topography; device manufacturing; high temperature processes; large diameter epitaxial wafers; low temperature processes; mechanical strength; oxide precipitates effect; p/p+ wafers; p/p++ wafers; p/p- wafers; precipitate size; slip dislocation behavior; thermal stress; Annealing; Conductivity; Degradation; Inductors; Large scale integration; Manufacturing; Substrates; Surface topography; Temperature; Thermal stresses;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-3752-2

Type

conf

DOI

10.1109/ISSM.1997.664645

Filename

664645