Title :
Effect of oxide precipitates on the mechanical strength of large diameter epitaxial wafers
Author :
Akatsuka, Masanori ; Sueoka, Koji ; Katahama, Hisashi ; Sadamitsu, S. ; Koike, Yasuo
Author_Institution :
Adv. Technol. Res. Labs., Sumitomo Metal Ind. Ltd., Amagasaki, Japan
Abstract :
The effects of oxide precipitates on mechanical strength are investigated in CZ, p/p-, p/p+ and p/p++ wafers during device manufacturing. In high temperature processes, the mechanical strength of epitaxial wafers is far superior to that of CZ wafers. In contrast, the mechanical strength of all the wafers remains sufficient in low temperature processes. The slip dislocation behavior can be explained by the sizes of oxide precipitates formed in each wafer
Keywords :
X-ray topography; elemental semiconductors; mechanical strength; precipitation; semiconductor epitaxial layers; semiconductor technology; silicon; slip; transmission electron microscopy; CZ wafers; Si; TEM; X-ray topography; device manufacturing; high temperature processes; large diameter epitaxial wafers; low temperature processes; mechanical strength; oxide precipitates effect; p/p+ wafers; p/p++ wafers; p/p- wafers; precipitate size; slip dislocation behavior; thermal stress; Annealing; Conductivity; Degradation; Inductors; Large scale integration; Manufacturing; Substrates; Surface topography; Temperature; Thermal stresses;
Conference_Titel :
Semiconductor Manufacturing Conference Proceedings, 1997 IEEE International Symposium on
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-3752-2
DOI :
10.1109/ISSM.1997.664645
