DocumentCode :
1914259
Title :
Data Retention in SOI-DRAM with Trench Capacitor Cell
Author :
Hanafi, Hussein I. ; Kanarsky, T. ; Schmitz, Stefan ; Hathorn, Kevin
Author_Institution :
IBM Corporation, Yorktown Heights, NY, United States
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
276
Lastpage :
279
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503542
Link To Document :
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