Title :
Electrophysical parameters of the SiO2-Si system at very high temperatures
Author :
Majkusiak, B. ; Beck, R.B.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Warsaw, Poland
Abstract :
Capacitance-voltage characteristics of the Ti/W-SiO2-Si(p) structures with different oxide thicknesses have been measured at temperatures in the range from 20°C to 550°C. Analysis of the results shows that the SiO2 relative dielectric permittivity increases with the temperature while the oxide effective charge density Qeff decreases and becomes negative at temperatures greater than 300°C.
Keywords :
MIS structures; elemental semiconductors; permittivity; silicon; silicon compounds; titanium; tungsten; Ti-W-SiO2-Si; capacitance-voltage characteristics; electrophysical parameters; oxide effective charge density; oxide thicknesses; silica relative dielectric permittivity; silica-Si system; temperature 20 degC to 550 degC; Capacitance measurement; Capacitance-voltage characteristics; Channel bank filters; MOS capacitors; Silicon; Temperature dependence; Temperature distribution; Temperature measurement; Thickness measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
