Title :
Electrical Properties of Thin Oxides for MOSFETs in the Poly-Si / SiO2 / 6H Silicon Carbide System
Author :
Zetterling, Carl-Mikael ; Östling, Mikael
Author_Institution :
Solid State Electron., R. Inst. of Technol., Kista, Sweden
Abstract :
This paper describes the fabrication of polysilicon / SiO2 / 6H silicon carbide structures with four different types of thin gate oxides. Wet and dry thermal oxidation, plasma-enhanced chemical vapor deposition (PECVD), and also an alternative method, oxidation of e-beam evaporated silicon, have been investigated. The four oxides were compared using capacitance-voltage measurements and breakdown field measurements. Breakdown fields exceeded 8 MV/cm for the thermal oxides, which is higher than previously published values.
Keywords :
MOSFET; capacitance measurement; oxidation; plasma CVD; silicon compounds; voltage measurement; MOSFET; SiO2; breakdown field measurements; capacitance-voltage measurements; dry thermal oxidation; electrical properties; plasma-enhanced chemical vapor deposition; silicon carbide system; thin gate oxides; wet thermal oxidation; Capacitance measurement; Chemical vapor deposition; Electric breakdown; Fabrication; MOSFETs; Oxidation; Plasma chemistry; Plasma measurements; Plasma properties; Silicon carbide;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
