Title :
Random Dopant Threshold Voltage Fluctuations in 50 nm Epitaxial Channel MOSFETs: A 3D ´Atomistic´ Simulation Study
Author_Institution :
The University of Glasgow, UK
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
