DocumentCode :
1914390
Title :
Random Dopant Threshold Voltage Fluctuations in 50 nm Epitaxial Channel MOSFETs: A 3D ´Atomistic´ Simulation Study
Author :
Asenov, Asen
Author_Institution :
The University of Glasgow, UK
fYear :
1998
fDate :
8-10 Sept. 1998
Firstpage :
300
Lastpage :
303
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid-State Device Research Conference, 1998. Proceeding of the 28th European
Conference_Location :
Bordeaux, France
Print_ISBN :
2-86332-234-6
Type :
conf
Filename :
1503548
Link To Document :
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