• DocumentCode
    1914433
  • Title

    Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation

  • Author

    de Saouza, M.A.S. ; Claeys, C. ; Doria, R.T. ; Pavanello, M.A. ; Simoen, E.

  • Author_Institution
    Lab. of Integrated Syst./PS1, Univ. of Sao Paulo, São Paulo, Brazil
  • fYear
    2012
  • fDate
    14-17 March 2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths.
  • Keywords
    MOSFET; channel capacity; semiconductor device noise; silicon-on-insulator; FD SOI nMOSFET; channel length measurement; low frequency noise reduction; planar SOI transistors; saturation; strained devices; uniaxial mechanical stress influence; Current measurement; Density measurement; Low-frequency noise; MOSFETs; Noise measurement; Stress; low frequency noise; planar SOI; sCESL; uniaxial mechanical stress;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4577-1116-9
  • Electronic_ISBN
    978-1-4577-1115-2
  • Type

    conf

  • DOI
    10.1109/ICCDCS.2012.6188929
  • Filename
    6188929
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1914433