Title :
Uniaxial mechanical stress influence on the low frequency noise in FD SOI nMOSFETs operating in saturation
Author :
de Saouza, M.A.S. ; Claeys, C. ; Doria, R.T. ; Pavanello, M.A. ; Simoen, E.
Author_Institution :
Lab. of Integrated Syst./PS1, Univ. of Sao Paulo, São Paulo, Brazil
Abstract :
This work presents a study of the influence of mechanical stress on the low frequency noise in planar SOI transistors operating in saturation. Several channel lengths were measured, and the results show a reduction of the low frequency noise for strained devices independent of the channel length, and this reduction is more effective for smaller channel lengths.
Keywords :
MOSFET; channel capacity; semiconductor device noise; silicon-on-insulator; FD SOI nMOSFET; channel length measurement; low frequency noise reduction; planar SOI transistors; saturation; strained devices; uniaxial mechanical stress influence; Current measurement; Density measurement; Low-frequency noise; MOSFETs; Noise measurement; Stress; low frequency noise; planar SOI; sCESL; uniaxial mechanical stress;
Conference_Titel :
Devices, Circuits and Systems (ICCDCS), 2012 8th International Caribbean Conference on
Conference_Location :
Playa del Carmen
Print_ISBN :
978-1-4577-1116-9
Electronic_ISBN :
978-1-4577-1115-2
DOI :
10.1109/ICCDCS.2012.6188929
