Title :
Observation and Modelling of the Gate-Source Capacitance Overshoot in Polysilicon TFTs
Author :
Tam, S.W.-B. ; Migliorato, P. ; Izzard, M.J. ; Reita, C.
Author_Institution :
Eng. Dept., Cambridge Univ., Cambridge, UK
Abstract :
A high sensitivity system has been set-up for the measurement of inter-nodal C-V characteristics in MOSFET devices at low frequencies (20 Hz to 100 kHz). Its application to the measurement of gate to source capacitance of polysilicon thin film transistors (poly-Si TFTs) reveals for the first time the presence of a peak exceeding the oxide capacitance at very low frequencies. This and other experimentally observed features are explained by a new analytical model requiring only the knowledge of the device channel conductance.
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; silicon; thin film transistors; MOSFET device; Si; TFT; device channel conductance; frequency 20 Hz to 100 kHz; gate to source capacitance measurement; gate-source capacitance overshoot; internodal C- V characteristic; oxide capacitance; thin film transistor; Analytical models; Capacitance measurement; Crystallization; Frequency measurement; Instruments; MOSFET circuits; Silicon; Thin film transistors; Time measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location :
Grenoble
