DocumentCode
1914450
Title
Observation and Modelling of the Gate-Source Capacitance Overshoot in Polysilicon TFTs
Author
Tam, S.W.-B. ; Migliorato, P. ; Izzard, M.J. ; Reita, C.
Author_Institution
Eng. Dept., Cambridge Univ., Cambridge, UK
fYear
1993
fDate
13-16 Sept. 1993
Firstpage
535
Lastpage
538
Abstract
A high sensitivity system has been set-up for the measurement of inter-nodal C-V characteristics in MOSFET devices at low frequencies (20 Hz to 100 kHz). Its application to the measurement of gate to source capacitance of polysilicon thin film transistors (poly-Si TFTs) reveals for the first time the presence of a peak exceeding the oxide capacitance at very low frequencies. This and other experimentally observed features are explained by a new analytical model requiring only the knowledge of the device channel conductance.
Keywords
MOSFET; elemental semiconductors; semiconductor device models; silicon; thin film transistors; MOSFET device; Si; TFT; device channel conductance; frequency 20 Hz to 100 kHz; gate to source capacitance measurement; gate-source capacitance overshoot; internodal C- V characteristic; oxide capacitance; thin film transistor; Analytical models; Capacitance measurement; Crystallization; Frequency measurement; Instruments; MOSFET circuits; Silicon; Thin film transistors; Time measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1993. ESSDERC '93. 23rd European
Conference_Location
Grenoble
Print_ISBN
2863321358
Type
conf
Filename
5435558
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