DocumentCode
19145
Title
Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices
Author
Sarkar, Anirban ; Nikonov, Dmitri E. ; Young, Ian A. ; Behin-Aein, Behtash ; Datta, Soupayan
Author_Institution
Process & Device Modeling Group, Intel Corp., Hillsboro, OR, USA
Volume
13
Issue
1
fYear
2014
fDate
Jan. 2014
Firstpage
143
Lastpage
150
Abstract
Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. The application of this approach to a wide class of charge-based and noncharge-based devices is discussed. The approach suggests pathways for improving the performance of `beyond-CMOS´ devices and a new realistic limit for energy-delay product in terms of the Planck´s constant.
Keywords
CMOS integrated circuits; Planck constant; benchmarking performance; beyond-CMOS information processing device; charge-resistance approach; dynamic evolution characteristic; energy-delay product; noncharge-based device; performance metric; CMOS integrated circuits; Delays; Equations; Information processing; Magnetic devices; Performance evaluation; Switches; Benchmarking; beyond-CMOS devices; electronic devices; energy-delay; spintronic devices;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2013.2292796
Filename
6680683
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