• DocumentCode
    19145
  • Title

    Charge-Resistance Approach to Benchmarking Performance of Beyond-CMOS Information Processing Devices

  • Author

    Sarkar, Anirban ; Nikonov, Dmitri E. ; Young, Ian A. ; Behin-Aein, Behtash ; Datta, Soupayan

  • Author_Institution
    Process & Device Modeling Group, Intel Corp., Hillsboro, OR, USA
  • Volume
    13
  • Issue
    1
  • fYear
    2014
  • fDate
    Jan. 2014
  • Firstpage
    143
  • Lastpage
    150
  • Abstract
    Multiple beyond-CMOS information processing devices are presently under active research and require methods of benchmarking them. A new approach for calculating the performance metric, energy-delay product, of such devices is proposed. The approach involves estimating the device properties of resistance and switching charge, rather than dynamic evolution characteristics, such as switching energy and time. The application of this approach to a wide class of charge-based and noncharge-based devices is discussed. The approach suggests pathways for improving the performance of `beyond-CMOS´ devices and a new realistic limit for energy-delay product in terms of the Planck´s constant.
  • Keywords
    CMOS integrated circuits; Planck constant; benchmarking performance; beyond-CMOS information processing device; charge-resistance approach; dynamic evolution characteristic; energy-delay product; noncharge-based device; performance metric; CMOS integrated circuits; Delays; Equations; Information processing; Magnetic devices; Performance evaluation; Switches; Benchmarking; beyond-CMOS devices; electronic devices; energy-delay; spintronic devices;
  • fLanguage
    English
  • Journal_Title
    Nanotechnology, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    1536-125X
  • Type

    jour

  • DOI
    10.1109/TNANO.2013.2292796
  • Filename
    6680683